An analysis of EUV resist stochastic printing failures

Abstract

A simple physicochemical description of stochastic printing failures is discussed. By combining this with combinatorial calculations of resist imaging chemistry and Monte Carlo analysis, estimates of the rates of random printing failures in nanoscale lithography can be made. This approach, based solely on component and photon statistics, provides results consistent with experimental reports. The method provides a general framework for predicting impacts of resist formulation, compositional and process changes on printing failures.