An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering

Abstract

We deposited hydrogenated amorphous silicon-based thin film transistors using dc reactive magnetron sputtering at a substrate temperature of 125 °C. We characterize the structural properties of the a-Si:H channel and a- SiNx : H dielectric layers using infra-red absorption, thermal hydrogen evolution, and refractive index measurements, and evaluate the electrical quality using conductivity, capacitance-voltage, and leakage current measurements. Inverted staggered thin film transistors made with these layers exhibit a field effect mobility of 0.3 cm2/V s, a Ion/Ioff ratio of 5 × 105, a subthreshold slope of 0.8 V/decade, and a threshold voltage of 3 V. © 1997 American Institute of Physics.