Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
The interface properties of hydrogenated amorphous carbon films (a-C) on Si and GaAs substrates have been studied by in-situ photoelectron spectroscopy measurements. The a-C films have been deposited by direct ion beam deposition. Distinct differences in the interface formation have been observed during film depositon on the two substrates. The data clearly reveal a decomposition of the GaAs at the interface which can be related to the reduced adhesion of a-C: H on the compound semiconductor substrate. © 1989 Springer-Verlag.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007