T. Schneider, E. Stoll
Physical Review B
The interface properties of hydrogenated amorphous carbon films (a-C) on Si and GaAs substrates have been studied by in-situ photoelectron spectroscopy measurements. The a-C films have been deposited by direct ion beam deposition. Distinct differences in the interface formation have been observed during film depositon on the two substrates. The data clearly reveal a decomposition of the GaAs at the interface which can be related to the reduced adhesion of a-C: H on the compound semiconductor substrate. © 1989 Springer-Verlag.
T. Schneider, E. Stoll
Physical Review B
Peter J. Price
Surface Science
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials