Veeresh Deshpande, V. Djara, et al.
Solid-State Electronics
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly doped source and drain electrodes by a metallic nickel silicide with the Fermi level close to the silicon mid-gap position. Such devices operate in a dual mode, as either a classical field-effect or single-electron transistor. We implement a classical logic NOT gate at low temperature by tuning two interconnected transistors into opposite polarities. In the quantum regime, we demonstrate stable quantum dot operation in the few charge carrier Coulomb blockade regime for both electrons and holes.
Veeresh Deshpande, V. Djara, et al.
Solid-State Electronics
Simon Geyer, Leon C. Camenzind, et al.
Applied Physics Letters
Veeresh Deshpande, V. Djara, et al.
EUROSOI-ULIS 2016
F.M. Bufler, M. Frey, et al.
DRC 2016