Aluminum films deposited by rf sputtering

Abstract

The feasibility of depositing aluminum thin films by means of rf sputtering has been investigated. Film characteristics compatible with the requirements of conductive stripes in integrated circuits have been obtained. The rate of film deposition has been related to rf power dissipation, argon pressure, geometry, and magnetic field. Film characteristics such as electrical resistivity, stress, grain size, and orientation have been studied and compared to the characteristics of films deposited by means of evaporation. The effects of annealing on some of these characteristics have been determined. © 1970 The Metallurgical Society of American Institute of Mining, Metallurgical and Petroleum Engineers, Inc., and American Society for Metals.