Jan M. Knaup, Han Li, et al.
Physical Review B - CMMP
Adsorption of B induces a (3 × 3) R30°reconstruction on Si(111). By combining scanning tunneling microscope topographs and spectra with first-principles calculations we are able to follow the different stages of B incorporation in the Si surface and the corresponding changes to the surface electronic states. We find that the thermodynamically stable configuration consists of a B substitutional atom directly below a Si adatom at a T4 site. The stability of this configuration is due to the relief of subsurface strain by the short B-Si bonds and the passivation of the surface obtained through charge transfer from the Si adatom to the substitutional B. © 1989 The American Physical Society.
Jan M. Knaup, Han Li, et al.
Physical Review B - CMMP
Ph. Avouris, A. Afzali, et al.
IEDM 2004
Andrew M. Rappe, Karin M. Rabe, et al.
Physical Review B
Ph. Avouris, In-Whan Lyo
Surface Science