Ph. Avouris, T. Hertel, et al.
Applied Surface Science
Scanning tunneling microscope (STM)-induced selective bond breaking in individual molecules and conventional STM imaging are combined to determine the nature of chemisorbed O2 species formed during the initial stages of silicon (111)-(7×7) oxidation. A selective atomic-scale modification mechanism that involves dissociative electron attachment of tip-emitted electrons to empty adsorbate orbitals is introduced. Two molecular species were found: one involves O2 bonded to an already oxidized silicon adatom, and the other involves an O2 molecule that is bonded to a second-layer rest atom and interacting with two silicon adatoms.
Ph. Avouris, T. Hertel, et al.
Applied Surface Science
H.C. Akpati, P. Nordlander, et al.
Surface Science
J. Appenzeller, R. Martel, et al.
Applied Physics Letters
Ph. Avouris, F. Bozso, et al.
Nuclear Inst. and Methods in Physics Research, B