A. Reznicek, S.W. Bedell, et al.
ECS Meeting 2004
Trench-edge defects formed during epitaxial recrystallization of trench-bounded amorphized silicon (a-Si) regions are examined as a function of Si substrate crystal orientation. In Si (001), rectilinear a-Si features having edges aligned with the crystal's in-plane 〈110〉 directions recrystallize leaving trench-edge defects along all trench edges, whereas the identical features in Si (011) recrystallize without trench-edge defects along trench edges parallel to the crystal's in-plane 〈100〉 direction and with trench-edge defects along trench edges parallel to the crystal's in-plane 〈110〉 direction. The positions and lateral extent of these trench-edge defects suggest that their source is defective epitaxy on slow-growing {111} planes formed during recrystallization. A heuristic model proposed to explain the formation of these {111} planes correctly predicts the essentially defect-free recrystallization seen for rectilinear a-Si features in Si (001) having edges aligned with the crystal's in-plane 〈100〉 directions, but cannot completely account for the distinctively curved growth fronts sometimes seen at intermediate stages of recrystallization. © 2007 American Institute of Physics.
A. Reznicek, S.W. Bedell, et al.
ECS Meeting 2004
D.K. Sadana, S.J. Koester, et al.
ECS Meeting 2006
K.L. Saenger, I.C. Noyan
Journal of Applied Physics
Ho-Ming Tong, H.K.D. Hsuen, et al.
Review of Scientific Instruments