Publication
Proceedings of the IEEE
Paper

A MESFET Distributed Amplifier with 2 GHz Bandwidth

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Abstract

A lumped distributed amplifier is built in a hybrid technique with microwave Schottky-barrier field-effect transistors and tested. A not yet optimized structure has a flat frequency response up to about 2 GHz and negligible phase distortions; ps-pulses are amplified with negligible overshoot. Copyright © 1969 by The Inshtute of Electrical and Electronics Engineers Inc.

Date

01 Jan 1969

Publication

Proceedings of the IEEE

Authors

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