Publication
Proceedings of the IEEE
Paper
A MESFET Distributed Amplifier with 2 GHz Bandwidth
Abstract
A lumped distributed amplifier is built in a hybrid technique with microwave Schottky-barrier field-effect transistors and tested. A not yet optimized structure has a flat frequency response up to about 2 GHz and negligible phase distortions; ps-pulses are amplified with negligible overshoot. Copyright © 1969 by The Inshtute of Electrical and Electronics Engineers Inc.