A Memory-Cell Array With Normally Off-Type Schottky-Barrier FET's

Abstract

The potential of the metal-semiconductor field-effect transistor (MESFET) as a device for a dc-stable fixed-address memory-cell array is described. The implementation of dc-coupled circuits with “normally off” MESFET's having l-μ m gate lengths yields several inherent advantages: high packing density, low power dissipation, low-power-delay time product, and low number of masking steps for transistors, diodes, and resistors. To demonstrate these advantages a fixed-address memory array with dc-stable cells has been chosen. The integrated cell area is 2.6 mil2. For a supply voltage Vs = 0.6 V, a standby power dissipation per cell of 5 μ W has been achieved. The cell switches within 4 ns. The differential sense current in the digit lines is Δ ls = 6 μ A. Copyright © 1972 by The Institute of Electrical and Electronics Engineers, Inc.