The DX centre
T.N. Morgan
Semiconductor Science and Technology
Magneto-transport measurements of the 2D hole system (2DHS) in p-type Si-Si1-xGex heterostructures identify the integer quantum Hall effect (IQHE) at dominantly odd-integer filling factors v and two low-temperature insulating phases (IPs) at v = 1.5 and v ≲ 0.5, with re-entrance to the quantum Hall effect at v = 1. The temperature dependence, current-voltage characteristics, and tilted field and illumination responses of the IP at v = 1.5 indicate that the important physics is associated with an energy degeneracy of adjacent Landau levels of opposite spin, which provides a basis for consideration of an intrinsic, many-body origin.
T.N. Morgan
Semiconductor Science and Technology
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
R. Ghez, M.B. Small
JES