Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
Magneto-transport measurements of the 2D hole system (2DHS) in p-type Si-Si1-xGex heterostructures identify the integer quantum Hall effect (IQHE) at dominantly odd-integer filling factors v and two low-temperature insulating phases (IPs) at v = 1.5 and v ≲ 0.5, with re-entrance to the quantum Hall effect at v = 1. The temperature dependence, current-voltage characteristics, and tilted field and illumination responses of the IP at v = 1.5 indicate that the important physics is associated with an energy degeneracy of adjacent Landau levels of opposite spin, which provides a basis for consideration of an intrinsic, many-body origin.
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
P. Alnot, D.J. Auerbach, et al.
Surface Science
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics