W. Zhu, Mukesh Khare, et al.
International Symposium on VLSI Technology, Systems, and Applications, Proceedings
A simple front-gate charge pumping technique has been developed, which enables the measurement of interface traps at both the front and the back interfaces of a fully depleted (FD) SOI/MOSFET. It is based on the strong coupling between the two interfaces, and its validity has been verified both experimentally and by computer simulation. Experiments have been performed on both SOI/NMOSFET's and SOI/PMOSFET's. This front-gate charge pumping technique is then utilized to study the hot-carrier induced degradation in SOI/NMOSFET's. It has been found that the back channel is physically damaged after front-channel hotcarrier injection. Front-gate Fowler-Nordheim (FN) injection has been found to cause damage at the front interface only. © 1998 IEEE.
W. Zhu, Mukesh Khare, et al.
International Symposium on VLSI Technology, Systems, and Applications, Proceedings
W. Lu, X.W. Wang, et al.
IEEE Electron Device Letters
R.R. Dube, D. Just, et al.
Proceedings of SPIE 1989
M.C. Bashaw, T.P. Ma, et al.
Journal of the Optical Society of America B: Optical Physics