A field effect transistor based on the Mott transition in a molecular layer

Abstract

Here we propose and analyze the behavior of a field effect transistor (FET)-like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal-insulator transition. The device has FET-like characteristics with a low "ON" impedance and high "OFF" impedance. Function of the device is feasible don to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed. © 1997 American Institute of Physics.