J. Misewich, P.L. Houston, et al.
The Journal of Chemical Physics
Here we propose and analyze the behavior of a field effect transistor (FET)-like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal-insulator transition. The device has FET-like characteristics with a low "ON" impedance and high "OFF" impedance. Function of the device is feasible don to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed. © 1997 American Institute of Physics.
J. Misewich, P.L. Houston, et al.
The Journal of Chemical Physics
J.H. Glownia, J. Misewich, et al.
The Journal of Chemical Physics
R. Martel, J. Misewich, et al.
DRC 2004
J. Misewich, S. Nakabayashi, et al.
Surface Science