A 32nm 0.5V-supply dual-read 6T SRAM
Jente B. Kuang, J. Schaub, et al.
CICC 2010
This paper presents a voltammetric microsystem which includes CMOS-integrated sensors, electronic interface, and data conversion circuits for enabling cost-effective, in situ detection of trace metals. The system's electronics were implemented in a 0.5 μm, 5 V, CMOS process and occupy 36 mm 2. Single-chip integration of the system was accomplished using post-CMOS, thin-film fabrication techniques. Due to its reduced ambient noise coupling and an integrated, pseudo-differential potentiostat, this design provides the best figures of merit for detection limit, area, and power published to date for heavy-metal microinstruments. The microsystem dissipates 16 mW and has successfully detected lead at concentrations of 0.3 ppb on 3.2 × 10 -5 cm 2 gold electrodes using subtractive anodic stripping voltammetry. © 2005 IEEE.
Jente B. Kuang, J. Schaub, et al.
CICC 2010
Jente B. Kuang, Keunwoo Kim, et al.
IEEE Transactions on VLSI Systems
Steven M. Martin, Fadi H. Gebara, et al.
IEEE Sensors Journal
Keunwoo Kim, Jente B. Kuang, et al.
IEEE Transactions on Electron Devices