Publication
Solid State Communications
Paper

A bond orbital model investigation of the surface electronic energy structure of Si(111)

View publication

Abstract

Intrinsic surface states for the Si(111) surface are investigated using the Bond Orbital Model. The semi-infinite crystal is simulated by gradually increasing the number of layers until the convergence is achieved. Total density of states are presented for unrelaxed, relaxed and the hydrogen chemisorbed Si(111) surfaces. The effect of the (2 × 1) reconstruction on the dangling bond surface state is also investigated. The results are in excellent agreement with photoemission experiments. © 1975.

Date

15 Jun 1975

Publication

Solid State Communications

Authors

Topics

Share