About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
RFIC 2012
Conference paper
A 60GHz class-E tuned power amplifier with PAE >25% in 32nm SOI CMOS
Abstract
A Class-E tuned CMOS power amplifier (PA) operating in the 60 GHz band is presented. Design, layout, and parasitic modeling considerations to attain high-efficiency millimeter-wave PA operation are discussed. Both single-ended and differential versions of the single-stage PA are implemented in a 32nm SOI CMOS process. Peak power added efficiency of 27% (30%), power gain of 8.8dB (10dB), and saturated output power >9dBm (12.5dBm) are measured at 60GHz from the single-ended (differential) PA with 0.9V supply. © 2012 IEEE.