Yuan Taur, Genda J. Hu, et al.
IEEE T-ED
Paper
A 1 mV MOS Comparator
Abstract
An MOS comparator circuit capable of detecting difference signals as low as 1 mV in 3 µs has been designed, built, and tested. The circuit does not require high accuracy components or tight control of device parameter tolerances. © 1978, IEEE. All rights reserved.
Related
Peter W. Cook, Dale L. Critchlow, et al.
IEEE JSSC
Conference paper
Semiconductor RAMs: Limits to growth
Walter F. Kosonocky, Lewis M. Terman
ISSCC 1977
Nicky C.C. Lu, Hu H. Chao, et al.
IEEE Journal of Solid-State Circuits