A 0.31V Vmin Cryogenic SRAM in 14 nm FinFET for Quantum Computing

Abstract

A fully functional compile-able 4.1Kb 6T SRAM macro in 14nm FinFET technology targeting low-voltage cryogenic operation with a configurable multi-supply boosting capability with VCSmin of 0.23V (room temperature) and 0.31V (6K) is demonstrated.