Conference paper
Record high RF performance for epitaxial graphene transistors
Yanqing Wu, Damon Farmer, et al.
IEDM 2011
Silicon bipolar transistors having cutoff frequencies from 40 to 50 GHz have been fabricated in a double-polysilicon self-aligned structure, using a process which relies on ion implantation for the intrinsic base formation. The devices have nearly ideal dc characteristics with breakdown voltages adequate for most digital applications. These results demonstrate that the performance limits of conventional implanted technologies are significantly higher than previously thought. © 1990 IEEE
Yanqing Wu, Damon Farmer, et al.
IEDM 2011
Joachim N. Burghartz, Mehmet Soyuer, et al.
IEEE Journal of Solid-State Circuits
John D. Cressler
Cryogenics
Shu-Jen Han, Alberto Valdes Garcia, et al.
IEDM 2013