R.J.S. Bates, S.D. Walker
ECOC 1990
Conference paper
3.5 GHz GaAs/Al0.3Ga0.7As I-MSM photodetector, compatible with heterostructure transistor technology
Abstract
For the first time, results on GaAs/Al0.3Ga0.7As short wavelength I-MSM photodetectors, compatible with GaAs heterostructure technologies are reported. Detector bandwidths greater than 3.5GHz were observed, with no low frequency gain and low dark currents.
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