Texture and resistivity of Cu and dilute Cu alloy films
K. Barmak, A. Gungor, et al.
MRS Proceedings 2002
25-nm-wide lines and spaces have been fabricated in 22.5-nm-thick films of PdAu (40: 60) using electron-beam exposure and polymethylmethacrylate (PMMA) resist. A high-resolution scanning transmission electron microscopy (STEM) was used to expose the resist and the samples were mounted on 60-nm-thick Si 3N4 membrane substrates. Previously, the smallest metal structures formed with a resist process were 60 nm wide with spaces between the lines several times larger than the lines. The results presented here show that 25-nm lines can be fabricated with a center to center spacing of 50 nm.
K. Barmak, A. Gungor, et al.
MRS Proceedings 2002
R.B. Laibowitz, A.N. Broers, et al.
Applied Physics Letters
T.M. Mayer, J.M.E. Harper, et al.
JVSTA
L. Clevenger, B. Arcot, et al.
MRS Spring Meeting 1996