R.V. Joshi, W. Hwang, et al.
IEEE International SOI Conference 1999
An ECL circuit with a charge-buffered active-pull-down emitter-follower stage is described. Implemented in a 0-8 /an double-poly trench-isolated selfaligned bipolar process, unloaded gate delays of 14.9ps/2.2mW, 20.7ps/1.2mW, and 24.5ps/0.77mW have been achieved. © 1992, The Institution of Electrical Engineers. All rights reserved.
R.V. Joshi, W. Hwang, et al.
IEEE International SOI Conference 1999
D.C. Pham, S. Asano, et al.
ISSCC 2005
W. Hwang, C.T. Chuang, et al.
International Journal of Electronics
B.T. Jonker, W.C. Chou, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films