Conference paper
Oxide breakdown model and its impact on SRAM cell functionality
R. Rodríguez, R.V. Joshi, et al.
SISPAD 2003
An ECL circuit with a charge-buffered active-pull-down emitter-follower stage is described. Implemented in a 0-8 /an double-poly trench-isolated selfaligned bipolar process, unloaded gate delays of 14.9ps/2.2mW, 20.7ps/1.2mW, and 24.5ps/0.77mW have been achieved. © 1992, The Institution of Electrical Engineers. All rights reserved.
R. Rodríguez, R.V. Joshi, et al.
SISPAD 2003
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VLSI Technology 1993
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ICICDT 2005
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Physical Review B - CMMP