Conference paper
A 1.9 ns/6.3 W/256 Kb bipolar SRAM design
Kai-Yap Toh, C.T. Chuang, et al.
Bipolar Circuits and Technology Meeting 1990
An ECL circuit with a charge-buffered active-pull-down emitter-follower stage is described. Implemented in a 0-8 /an double-poly trench-isolated selfaligned bipolar process, unloaded gate delays of 14.9ps/2.2mW, 20.7ps/1.2mW, and 24.5ps/0.77mW have been achieved. © 1992, The Institution of Electrical Engineers. All rights reserved.
Kai-Yap Toh, C.T. Chuang, et al.
Bipolar Circuits and Technology Meeting 1990
B.T. Jonker, W.C. Chou, et al.
Journal of Applied Physics
B.S. Wu, C.T. Chuang, et al.
IEEE Transactions on Electron Devices
C.T. Chuang, Ken Chin
IEEE Journal of Solid-State Circuits