Conference paper
Influence and model of gate oxide breakdown on CMOS inverters
R. Rodríguez, J.H. Stathis, et al.
Microelectronics Reliability
An ECL circuit with a charge-buffered active-pull-down emitter-follower stage is described. Implemented in a 0-8 /an double-poly trench-isolated selfaligned bipolar process, unloaded gate delays of 14.9ps/2.2mW, 20.7ps/1.2mW, and 24.5ps/0.77mW have been achieved. © 1992, The Institution of Electrical Engineers. All rights reserved.
R. Rodríguez, J.H. Stathis, et al.
Microelectronics Reliability
B.T. Jonker, L.P. Fu, et al.
Journal of Applied Physics
C.T. Chuang
IEEE International SOI Conference 1998
R. Puri, C.T. Chuang
VLSID 2000