Chirag Garg

Patents

• • 16 Mar 2026
  • US
  • 12581868

  Half Metallic Heusler Multilayers With Perpendicular Magnetic Anisotropy
• • 11 Feb 2026
  • KR
  • 10-2928618

  Iral As A Non-magnetic Spacer Layer For Formation Of Syntheticanti-ferromagnets (saf) With Heusler Compounds
• • 11 Feb 2026
  • KR
  • 10-2928653

  Tunable Templating Layers For Perpendicularly Magnetizedheusler Films
• • 11 Feb 2026
  • KR
  • 10-2928627

  Templating Layers For Perpendicularly Magnetized Heusler Films/compounds
• • 15 Sep 2025
  • CN
  • ZL202010078380.6

  Heusler Compounds With Non-magnetic Spacer Layer For Formationof Synthetic Anti-ferromagnets (saf)
• • 22 Jul 2025
  • NL
  • 4027344

  Insertion Layers For Perpendicularly Magnetized Heusler Free Layer With Low Magnetic Damping
• • 22 Jul 2025
  • GB
  • 4027344

  Insertion Layers For Perpendicularly Magnetized Heusler Free Layer With Low Magnetic Damping
• • 22 Jul 2025
  • DE
  • 602021034513.5

  Insertion Layers For Perpendicularly Magnetized Heusler Free Layer With Low Magnetic Damping
• • 26 May 2025
  • US
  • 12317508

  Tuning Perpendicular Magnetic Anisotropy Of Heusler Compound In Mram Devices
• • 07 Apr 2025
  • US
  • 12274179

  Seed Layer For Enhancing Tunnel Magnetoresistance With Perpendicularly Magnetized Heusler Films