Analysis of a one-billion atom simulation of work-hardening in ductile materials
- Markus J. Buchler
- Alexander Hartmaier
- et al.
- 2004
- MRS Proceedings 2004
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8 results at MRS Proceedings 2004
Concentration dependence of boron-interstitial cluster (BIC) formation in silicon-on-insulator (SOI)
- A.F. Saavedra
- K.S. Jones
- et al.
- 2004
- MRS Proceedings 2004
Influence of He implantation conditions on strain relaxation and threading dislocation density in Si0.8Ge0.2 virtual substrates
- J. Cai
- P.M. Mooney
- et al.
- 2004
- MRS Proceedings 2004
Hyperelastic effects in brittle materials failure
- Markus J. Buehler
- Farid F. Abraham
- et al.
- 2004
- MRS Proceedings 2004
Supercritical CO2 treatments for semiconductor applications
- S. Gangopadhyay
- J.A. Lubguban
- et al.
- 2004
- MRS Proceedings 2004
Strained Si-on-insulator fabricated from elastically-relaxed Si/SiGe structures
- P.M. Mooney
- G.M. Cohen
- et al.
- 2004
- MRS Proceedings 2004
High-performance SiGe MODFET technology
- S.J. Koester
- J.O. Chu
- et al.
- 2004
- MRS Proceedings 2004
A survey of defects in strained Si layers
- S.W. Bedell
- H. Chen
- et al.
- 2004
- MRS Proceedings 2004