Effects of alloying elements on cobalt silicide formation
- C. Lavoie
- C. Cabral Jr.
- et al.
- 2002
- Journal of Electronic Materials
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High conductivity copper-boron alloys obtained by low temperature annealing
- S.-L. Zhang
- J.M.E. Harper
- et al.
- 2001
- Journal of Electronic Materials
SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition
- P.M. Mooney
- J.O. Chu
- et al.
- 2000
- Journal of Electronic Materials
Characterization of electroplated bismuth-tin alloys for electrically conducting materials
- S.K. Kang
- Stephen L. Buchwalter
- et al.
- 2000
- Journal of Electronic Materials
Transfer of semiconductor and oxide films by wafer bonding and layer cutting
- Qin-Yi Tong
- Li-Juan Huang
- et al.
- 2000
- Journal of Electronic Materials
Nondestructive analysis of structural defects in wide bandgap II-VI heterostructures
- M.S. Goorsky
- S.E. Lindo
- et al.
- 1996
- Journal of Electronic Materials
Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy
- S. Sethi
- P. Bhattacharya
- 1996
- Journal of Electronic Materials
Thermomechanical deformation of 1 μm thick Cu-polyimide line arrays studied by scanning probe microscopy
- D.V. Zhmurkin
- T.S. Gross
- et al.
- 1996
- Journal of Electronic Materials
Interfacial reactions during soldering with lead-tin eutectic and lead (Pb)-free, tin-rich solders
- S.K. Kang
- R.S. Rai
- et al.
- 1996
- Journal of Electronic Materials
Valence-band discontinuity between GaN and AIN measured by x-ray photoemission spectroscopy
- G. Martin
- S. Strite
- et al.
- 1995
- Journal of Electronic Materials