Reliability and structural design of a wafer-level 3D integration scheme with W TSVs based on Cu-oxide hybrid wafer bonding
- K.N. Chen
- T.M. Shaw
- et al.
- 2010
- IEDM 2010
Conference paper
Publications
Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates
- Shu-Jen Han
- Josephine Chang
- et al.
- 2010
- IEDM 2010
Conference paperHigh on-off ratio bilayer graphene complementary field effect transistors
- Kausik Majumdar
- Kota V. R. M. Murali
- et al.
- 2010
- IEDM 2010
Conference paperAn anomalous correlation between gate leakage current and threshold voltage fluctuation in advanced MOSFETs
- Zihong Liu
- Paul Chang
- et al.
- 2010
- IEDM 2010
Conference paperElastic refresh: Techniques to mitigate refresh penalties in high density memory
- Jeffrey Stuechelixz
- Dimitris Kaseridis
- et al.
- 2010
- MICRO 2010
Conference paperA 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technology
- Nauman Z. Butt
- Kevin McStay
- et al.
- 2010
- IEDM 2010
Conference paperPhysical origin of pFET threshold voltage modulation by ge channel ion implantation (GC-I/I)
- Yoshinori Tsuchiya
- Nathaniel Berliner
- et al.
- 2010
- IEDM 2010
Conference paperVoltage polarity effects in GST-based phase change memory: Physical origins and implications
- A. Padilla
- G.W. Burr
- et al.
- 2010
- IEDM 2010
Conference paperGraphene-based fast electronics and optoelectronics
- Ph. Avouris
- Yu-Ming Lin
- et al.
- 2010
- IEDM 2010
Conference paperDiversify and combine: Improving word alignment for machine translation on low-resource languages
- Bing Xiang
- Yonggang Deng
- et al.
- 2010
- ACL 2010
Conference paper