High quality interfacial layer formation for Si0.75Ge0.25 (100) high-k metal gate stack
- S. Siddiqui
- R. Galatage
- et al.
- 2020
- Microelectronic Engineering
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3 results for P. Srinivasan
Graphene: Is it the future for semiconductors? An overview of the material, devices, and applications
- Yaw Obeng
- Purushothaman Srinivasan
- 2011
- Electrochemical Society Interface
Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons
- P. Srinivasan
- B.P. Linder
- et al.
- 2007
- Microelectronic Engineering