Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te 5
- J.S. Washington
- Eric A. Joseph
- et al.
- 2011
- Journal of Applied Physics
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4 results for L. Miotti
Post deposition annealing of Hf aluminate films on Si investigated by ion backscattering and nuclear reaction analyses
- L. Miotti
- R.P. Pezzi
- et al.
- 2008
- Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Atomic transport and integrity of Al2O3(2.0 nm)/HfO2(2.5 nm) gate stacks on Si
- L. Miotti
- R.P. Pezzi
- et al.
- 2007
- Applied Physics Letters
Interaction of HfO2/SiO2/Si structures with deuterium gas
- C. Driemeier
- L. Miotti
- et al.
- 2006
- Applied Physics Letters