New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
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6 results for A. Grun
A GexSe1-x switch-only-memory technology through polarized atomic distribution
- Zhi-Lun Liu
- Alexander Grun
- et al.
- 2024
- Scientific Reports
As-Se-Ge-S and Ge-N Heterostructures for Superior OTS Performance
- A. Grun
- Z.L. Lui
- et al.
- 2024
- IMW 2024
A Novel Program-verify Free and Low Drift Multi-level Operation on Cross-point OTS-PCM for In-Memory Computing Application
- W.C. Chien
- C.L. Sung
- et al.
- 2024
- IMW 2024
A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications
- W. Chien
- E. Lai
- et al.
- 2023
- IMW 2023
Low RESET Current Mushroom-Cell Phase-Change Memory Using Fiber-Textured Homostructure GeSbTe on Highly Oriented Seed Layer
- Guy M. Cohen
- Amlan Majumdar
- et al.
- 2024
- physica status solidi RRL