Asymmetric Energy Distribution of Interface Traps in n- and p-MOSFETs with HfO2 Gate Dielectric on Ultrathin SiON Buffer Layer
- J.-P. Han
- E.M. Vogel
- et al.
- 2004
- IEEE Electron Device Letters
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.