Residual Stress, Chemical Etch Rate, Refractive Index, and Density Measurements on SiO2 Films Prepared Using High Pressure Oxygen
- E.A. Irene
- D.W. Dong
- et al.
- 2019
- JES
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WP-A7 Some Physical Properties of Dry High-Pressure Oxide Films on Silicon
- Robert J. Zeto
- E.A. Irene
- et al.
- 1978
- IEEE T-ED