The analysis of dislocations in strained III-V semiconductor crystals using elastobirefringence
- H. Booyens
- J.H. Basson
- 2008
- Journal of Applied Physics
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The application of elastobirefringence to the study of strain fields and dislocations in III-V compounds
- H. Booyens
- J.H. Basson
- 2008
- Journal of Applied Physics
Strain effects associated with SiO layers evaporated onto GaAs
- H. Booyens
- G.R. Proto
- et al.
- 1983
- Journal of Applied Physics
Thermal stability of Pb-alloy Josephson junction electrode materials. IV. Effects of crystal structure of Pb-Bi counter electrodes
- J.H. Basson
- Masanori Murakami
- et al.
- 1982
- Journal of Applied Physics
The behavior of dislocations in GaAs substrates during the growth of GaxAl1-xAs epitaxial layers
- H. Booyens
- J.H. Basson
- et al.
- 1981
- Journal of Applied Physics
Misfit dislocations and the morphology of gallium aluminum arsenide epitaxial layers grown on gallium arsenide
- H. Booyens
- M.B. Small
- et al.
- 1981
- Journal of Applied Physics