PaperUse of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1-xPT.J. de Lyon, N.I. Buchan, et al.Journal of Crystal Growth
PaperPersistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctionsM.I. Nathan, T.N. Jackson, et al.Journal of Electronic Materials
PaperIon implantation and annealing of undoped (Al,Ga)As/GaAs heterostructuresH. Baratte, T.N. Jackson, et al.Applied Physics Letters