Conference paper
Scaling effect on electromigration in on-chip Cu wiring
C.-K. Hu, R. Rosenberg, et al.
IITC 1999
A value of the constant D0Z* for grain boundary electromigration in alluminum thin films is determined to be 3(± 0.5) × 10-2. Generalized curves are provided for (v̄i/j)T against T-1 for aluminum films. These curves can be used to obtain appropriate ionic velocities at any temperature or current density for films of known grain size. © 1970 The American Institute of Physics.
C.-K. Hu, R. Rosenberg, et al.
IITC 1999
C.-K. Hu, L. Gignac, et al.
Microelectronic Engineering
C.-K. Hu, Matthew Angyal, et al.
International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
R. Rosenberg, D. Edelstein, et al.
Annual Review of Materials Science