About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
VALUE D0Z* for GRAIN BOUNDARY ELECTROMIGRATION in ALUMINUM FILMS
Abstract
A value of the constant D0Z* for grain boundary electromigration in alluminum thin films is determined to be 3(± 0.5) × 10-2. Generalized curves are provided for (v̄i/j)T against T-1 for aluminum films. These curves can be used to obtain appropriate ionic velocities at any temperature or current density for films of known grain size. © 1970 The American Institute of Physics.