UNUSUAL MUONIUM (HYDROGEN-ANALOG) DEFECT CENTERS IN SEMICONDUCTORS.

Abstract

The muonium defects formed in tetrahedrally coordinated crystals by implanting positive muons are described. These defects have now been found in III-V and I-VII materials thus extending the earlier results on the group IV elements. The hyperfine parameters of anomalous muonium (Mu*) in GaAs and GaP are found to be nearly the same which is interpreted as evidence of Mu* being substitutional at a group V site. The normal muonium centers observed in the cuprous halides have hyperfine parameters reduced to typically 30% of the vacuum value which is far lower than any other crystal yet studied.