About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physical Review B
Paper
Unoccupied electronic states of graphite as probed by inverse-photoemission and tunneling spectroscopy
Abstract
The unoccupied electronic bulk and surface states of graphite are probed by inverse photoemission at h1/2=9.7 eV and by tunneling spectroscopy, and the results from each method are found to agree very well with each other. In particular, * bands at the bulk Q point are found at EF+1.7 eV. Extrinsic surface states (or defect states) are found around EF+2.5 eV, which can be quenched by activated hydrogen or oxygen and by water at low temperatures, but are also dependent on surface preparation. In contrast, the feature at EF+3.5 eV is left unaffected, questioning an interpretation in terms of intrinsic surface states. Rather, we associate it with the bottom of the three-dimensional interlayer band. © 1986 The American Physical Society.