G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Paper
Ultra-small punchthrough MOSFET
Abstract
A design for an ultra-small MOSFET is presented. MOSFETs with submicron channel lengths (L ≲ 0.25 μm) that operate with controlled punchthrough current are analyzed by two-dimensional numerical modeling. Current-voltage characteristics for subthreshold, nonsaturated and saturated regions of operation were obtained at various temperatures for devices of different channel length. The results indicate that device current is due to barrier-limited, space-charge-limited and surface-inversion conduction processes. © 1985.
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