J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
Using a scanning tunneling microscope, the tunneling current versus voltage is measured at fixed values of separation between a tungsten probe-tip and a Si(111)2 × 1 surface. Rectification is observed in the I - V curves and is quantitatively accounted for by an electric-field enhancement due to the finite radius-of-curvature of the probe-tip. The parallel wave-vector of certain states is obtained from the decay length of the tunneling current. A rich spectrum is obtained in the ratio of differential to total conductivity, yielding a direct measure of the Si surface density-of-states. Small shifts are observed in the spectrum as a function of doping, and are attributed to shifts in the position of the surface Fermi level. © 1987.
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
P. Alnot, D.J. Auerbach, et al.
Surface Science
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020