Publication
Applied Physics Letters
Paper

Tunneling in metal-glass-silicon structures

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Abstract

Low-temperature conductance peaks have been observed in tunneling measurements on aluminum-phosphosilicate glass-degenerate silicon sandwich structures. In magnetic fields up to 84 kOe these peaks split and, with certain assumptions, the g value for the impurity responsible for the peak is found to be 2.1 ± 0.1. © 1968 The American Institute of Physics.

Date

17 Oct 2003

Publication

Applied Physics Letters

Authors

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