Tunneling in metal-glass-silicon structures

Abstract

Low-temperature conductance peaks have been observed in tunneling measurements on aluminum-phosphosilicate glass-degenerate silicon sandwich structures. In magnetic fields up to 84 kOe these peaks split and, with certain assumptions, the g value for the impurity responsible for the peak is found to be 2.1 ± 0.1. © 1968 The American Institute of Physics.