Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Tunneling between two-dimensional electron gases
Abstract
The current-voltage characteristics of AlAs-GaAs-AlAs heterostructures under hydrostatic pressures above 8 kbar have shown sharp negative differential resistance near zero bias. This result is understood in terms of tunneling through a GaAs potential barrier between two-dimensional electron gases formed in AlAs at the X point of the Brillouin zone. © 1990.
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