Julien Autebert, Aditya Kashyap, et al.
Langmuir
The current-voltage characteristics of AlAs-GaAs-AlAs heterostructures under hydrostatic pressures above 8 kbar have shown sharp negative differential resistance near zero bias. This result is understood in terms of tunneling through a GaAs potential barrier between two-dimensional electron gases formed in AlAs at the X point of the Brillouin zone. © 1990.
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Robert W. Keyes
Physical Review B
Hiroshi Ito, Reinhold Schwalm
JES
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990