Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
At low temperatures, the spin-spin relaxation mechanism in PrCl3 is caused by the fluctuating electric-field gradients due to the transverse Pr moments. In this paper, a finite-chain calculation for the transverse autocorrelation function Sxx(q,ω) has been performed and evaluated in the temperature range kT/J < 4. Qualitative agreement is found for the temperature dependence of the spin-spin relaxation time, and an explanation is proposed for the deviations observed. © 1983.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009