True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
We have measured the transport properties in field effect transistors that incorporate underdoped YBa2Cu3O7-δ as the conducting channel material. Once fabricated, devices are deoxygenated in argon gas at temperatures 250-350 °C. The devices are then vapor cooled above a bath of liquid helium and two-wire resistivity measurements are made between room temperature and 4.2 K. For zero applied gate voltage (Vg) and in sufficiently underdoped devices we observe two-dimensional (2D) Mott variable range hopping (VRH). As we remove more oxygen, we observe a transition to Efros-Shklovskii VRH. For Vg<O we generally observe 2D Mott VRH.
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Revanth Kodoru, Atanu Saha, et al.
arXiv