Transient transport of electrons in InP is studied under the condition of high-energy electron injection. This study makes use of a Monte Carlo simulation with the unique inclusion of realistic band-structure as derived from an empirical pseudopotential method. The results obtained herein for InP are qualitatively similar to those previously obtained by the authors for GaAs. Quantitatively, it is found that ultra-high electron drift velocities (≃10<sup>8</sup> cm/s) persist for much higher electric fields and over much longer distance of electron traversal in InP as compared to GaAs. Copyright © 1983 by The Institute of Electrical and Electronics Engineers, Inc.