Transient capacitance study of defects introduced by electron-beam deposition of metals on p-type silicon

Abstract

Defects introduced during electron-beam deposition of Mo, Hf, and Ti on p-type silicon were studied with deep level transient spectroscopy. The most prominent defect observed after deposition was a hole trap, H(0.35), at E v+0.35 eV. After annealing, H(0.35) migrates deeper into the substrate and several other defects appear. H(0.35) and H(0.38), which were observed after H(0.35) annealed out, exhibit the same annealing behavior as defects with the same thermal activation energies introduced by ion-beam and rf sputtering of Mo and Ti-W on p-type silicon, and also by high-energy (2 MeV) electron irradiation. Annealing at 550 °C for 10 min sufficed to remove all the defects introduced during electron-beam deposition.