H.D. Dulman, R.H. Pantell, et al.
Physical Review B
trans-trans-2,5-Bis-[2-{5-(2,2′-bithienyl)}ethenyl]thiophene (BTET) was synthesized and then purified in a gradient sublimation system. It was characterized using IR, UV-Vis and mass spectroscopy, and elemental analysis. BTET films were deposited with molecular beam deposition (MBD) or spin-coating from solution. Insulated-gate field-effect transistor (IGFET) devices based on such films were used to study their electrical transport properties. A field-effect mobility of 0.01 cm2 V-1 s-1 was measured from films deposited with MBD, while the mobility of the spin-coated films was slightly above 0.001 cm2 V-1 s-1. © Published by 1997 Elsevier Science S.A.
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
E. Burstein
Ferroelectrics
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Frank Stem
C R C Critical Reviews in Solid State Sciences