Abstract
In this brief, we investigate the extendibility of FinFETs and planar bulk devices to 7- and 5-nm technology nodes focusing on electrostatics. At these nodes, the expected contacted device pitch will be in the range of 30-40 nm, requiring the gate length to scale to 12-14-nm range. We show that 6-nm-thick FinFET can scale to these gate lengths while maintaining the equivalent electrostatics as the current 14-nm node high-performance FinFETs. We show that planar bulk devices can scale to the same gate lengths using ultrashallow extension junctions and recessed device channel without aggressive gate insulator scaling and possess electrostatics equivalent to the high-performance planar 22-nm node.