C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
We report on photoluminescence time decays of excitons bound to donors in high-purity, n-type GaAs at He temperatures and high hydrostatic pressures (up to 80 kbar), for both direct (P41.3 kbar) and indirect band gaps. Measured lifetimes for direct donor-exciton states (D+,X) are uniformly fast, being 1 nsec, and correspond to either the exciton formation or radiative decay times. For indirect donor-exciton states (DX0,X), the observed lifetimes are much longer (20 100 nsec), increase with pressure, and reflect a combination of nonradiative Auger decay and band-structure-dependent natural radiative decay. The considerable difference observed between the donor lifetimes over the range of pressures inducing the-X transition illustrates the importance of band structure for shallow, bound states in multivalley semiconductors. © 1986 The American Physical Society.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
T.N. Morgan
Semiconductor Science and Technology
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
David B. Mitzi
Journal of Materials Chemistry