T.H. Ning, C.T. Sah
Physical Review B
Experimental evidence of a new type of threshold instability in IGFET's due to the emission of leakage electrons from the silicon substrate into SiO 2 is presented. Also presented is a model relating the emission current to the leakage current components of the device. This emission phenomenon could be a serious threshold instability problem at high operating temperatures where the leakage current level is high, especially in devices with a dual dielectric as the gate insulator where the electron trap concentration is very high.
T.H. Ning, C.T. Sah
Physical Review B
G. Shahidi, J. Warnock, et al.
IBM J. Res. Dev
T.C. Chen, J.D. Cressler, et al.
VLSI Technology 1989
C.M. Osburn, E. Bassous
JES