T.H. Ning, C.M. Osburn, et al.
Journal of Electronic Materials
Experimental evidence of a new type of threshold instability in IGFET's due to the emission of leakage electrons from the silicon substrate into SiO 2 is presented. Also presented is a model relating the emission current to the leakage current components of the device. This emission phenomenon could be a serious threshold instability problem at high operating temperatures where the leakage current level is high, especially in devices with a dual dielectric as the gate insulator where the electron trap concentration is very high.
T.H. Ning, C.M. Osburn, et al.
Journal of Electronic Materials
S. Zafar, M. Yang, et al.
VLSI Technology 2005
T.H. Ning
ICSICT 1995
T.H. Ning
Microelectronics and VLSI, TENCON 1995