Conference paper
Design and technology challenges for sub-0.5 μm CMOS and bipolar
T.H. Ning
VLSI-TSA 1989
Experimental evidence of a new type of threshold instability in IGFET's due to the emission of leakage electrons from the silicon substrate into SiO 2 is presented. Also presented is a model relating the emission current to the leakage current components of the device. This emission phenomenon could be a serious threshold instability problem at high operating temperatures where the leakage current level is high, especially in devices with a dual dielectric as the gate insulator where the electron trap concentration is very high.
T.H. Ning
VLSI-TSA 1989
T.H. Ning, C.T. Sah
Physical Review B
T.H. Ning, H.N. Yu
Journal of Applied Physics
J.M. Green, C.M. Osburn, et al.
Journal of Electronic Materials