INVERSE PHOTOEMISSION AT SEMICONDUCTOR SURFACES.
F.J. Himpsel, D. Straub, et al.
ICPS Physics of Semiconductors 1984
Angle-resolved inverse photoemission with tunable photon energies has been used to map out the unoccupied bands of graphite and lithium-intercalated graphite. At the Brillouin zone center the bottom of the lowest band is found at 4.0±0.5 eV above the Fermi level in graphite. This band shows strong dispersion normal to the basal plane in excellent agreement with recent self-consistent band-structure calculations. A similar three-dimensional band is found in lithium-intercalated graphite shifted 3 eV to lower energy. © 1983 The American Physical Society.
F.J. Himpsel, D. Straub, et al.
ICPS Physics of Semiconductors 1984
F.J. Himpsel
Physical Review Letters
M.E. Haugan, Qibiao Chen, et al.
Physical Review B
D.E. Eastman, J.A. Knapp, et al.
Physical Review Letters