About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
Thermally stimulated studies of bismuth silicon oxide crystal
Abstract
Thermally stimulated current (TSC) of nominally undoped bismuth silicon oxide crystals was measured after UV excitation at liquid nitrogen temperature. The results were compared with the data in the literature, and the origins of some discrepancy discussed. The TSC measurement was very sensitive to the crystal lot; that is probably to the structural defects.